Fisika Modern 15 molecules andsolid_semiconductor
•
0 likes•9 views
The document discusses semiconductor materials and their electrical properties. It explains that semiconductors have electrical conductivity between metals and insulators. The electrical properties of semiconductors can be understood using band theory, where electrons occupy allowed energy bands separated by forbidden gaps. At low temperatures, semiconductors behave as insulators as their valence bands are full and conduction bands are empty, but at room temperature some electrons gain enough thermal energy to cross the gap. This allows both holes and electrons to contribute to electrical conduction in semiconductors.
Report
Share
Report
Share
![Pertemuan 15 Fisika Modern Molecules And Solid Hadi Nasbey, M.Si ,[object Object],[object Object],07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |](https://image.slidesharecdn.com/15moleculesandsolidsemiconductor-110307013525-phpapp02/85/Fisika-Modern-15-molecules-andsolid_semiconductor-1-320.jpg)
![Outline ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Recommended
Chapter3 introduction to the quantum theory of solids
The document provides an introduction to the quantum theory of solids, including:
1. How allowed and forbidden energy bands form in solids due to the interaction of atomic electron wave functions when atoms are brought close together in a crystal lattice.
2. Electrical conduction in solids is explained using the concept of electron effective mass and holes, within the framework of the energy band model.
3. The Kronig-Penney model is used to quantitatively relate the energy, wave number, and periodic potential within a solid, resulting in allowed and forbidden energy bands.
The semiconductors.docx
Semiconductors have electrical properties between conductors and insulators. They behave as insulators at low temperatures but conduct electricity at room temperature due to their small band gap. Doping semiconductors with impurities creates an excess of electrons or holes, making them n-type or p-type. A p-n junction is formed at the boundary between p-type and n-type semiconductors and allows current to flow in only one direction, making it useful for diodes. Diodes are used to convert alternating current to direct current and have many applications in electronics.
SEMICONDUCTORS,BAND THEORY OF SOLIDS,FERMI-DIRAC PROBABILITY,DISTRIBUTION FUN...
This PPT contains valence band,conduction band& forbidden energy gap,Free carrier charge density,intrinsic and extrinsic semiconductors,Conductivity in semiconductors
Band theory
The document discusses band theory of solids and key concepts like the Fermi level, band gaps, and conduction in different materials. It explains that the Fermi level describes the highest occupied electron energy level at absolute zero. Materials are classified based on their band gap as conductors, semiconductors, or insulators. Conductors have a small or overlapping band gap allowing conduction, while insulators have a large gap preventing conduction except at very high temperatures. Semiconductors have an intermediate gap size and can conduct at higher temperatures when electrons are thermally excited across the gap.
хагас дамжуулагчийн физик
Semiconductor theory describes how small amounts of impurities can be added to intrinsic semiconductors to create n-type and p-type materials. N-type semiconductors are created by adding elements with extra electrons, while p-type are created by adding elements with electron deficiencies. The junction between a p-type and n-type material allows current to flow in only one direction, forming the basis for important semiconductor devices such as diodes, transistors, and solar cells.
Band theory of solid
The document discusses band theory of solids and semiconductor devices. It explains that in solids, discrete electron energy levels split into bands. The valence band is fully filled while the conduction band is empty or partially filled, with a band gap separating the two. Semiconductors have a smaller band gap than insulators. Intrinsic semiconductors have equal numbers of electrons and holes, while extrinsic ones are doped with impurities. PN junctions are formed by combining P-type and N-type materials and act as diodes, allowing current in one direction. Diodes have applications as rectifiers, transistors, and other devices that convert between electrical and optical signals.
7 band structure
The document discusses the transition from discrete atomic energy levels to energy bands in crystalline solids. As atoms come together to form a crystal lattice, the discrete energy levels of individual atoms broaden and overlap, forming continuous bands of allowed energies separated by forbidden gaps. Electrons near the top of the valence band can be excited into the conduction band, where they behave as free particles able to move through the solid and conduct electricity. Covalent bonding between atoms is also explained using the concept of energy bands.
Band structure(2)
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
Recommended
Chapter3 introduction to the quantum theory of solids
The document provides an introduction to the quantum theory of solids, including:
1. How allowed and forbidden energy bands form in solids due to the interaction of atomic electron wave functions when atoms are brought close together in a crystal lattice.
2. Electrical conduction in solids is explained using the concept of electron effective mass and holes, within the framework of the energy band model.
3. The Kronig-Penney model is used to quantitatively relate the energy, wave number, and periodic potential within a solid, resulting in allowed and forbidden energy bands.
The semiconductors.docx
Semiconductors have electrical properties between conductors and insulators. They behave as insulators at low temperatures but conduct electricity at room temperature due to their small band gap. Doping semiconductors with impurities creates an excess of electrons or holes, making them n-type or p-type. A p-n junction is formed at the boundary between p-type and n-type semiconductors and allows current to flow in only one direction, making it useful for diodes. Diodes are used to convert alternating current to direct current and have many applications in electronics.
SEMICONDUCTORS,BAND THEORY OF SOLIDS,FERMI-DIRAC PROBABILITY,DISTRIBUTION FUN...
This PPT contains valence band,conduction band& forbidden energy gap,Free carrier charge density,intrinsic and extrinsic semiconductors,Conductivity in semiconductors
Band theory
The document discusses band theory of solids and key concepts like the Fermi level, band gaps, and conduction in different materials. It explains that the Fermi level describes the highest occupied electron energy level at absolute zero. Materials are classified based on their band gap as conductors, semiconductors, or insulators. Conductors have a small or overlapping band gap allowing conduction, while insulators have a large gap preventing conduction except at very high temperatures. Semiconductors have an intermediate gap size and can conduct at higher temperatures when electrons are thermally excited across the gap.
хагас дамжуулагчийн физик
Semiconductor theory describes how small amounts of impurities can be added to intrinsic semiconductors to create n-type and p-type materials. N-type semiconductors are created by adding elements with extra electrons, while p-type are created by adding elements with electron deficiencies. The junction between a p-type and n-type material allows current to flow in only one direction, forming the basis for important semiconductor devices such as diodes, transistors, and solar cells.
Band theory of solid
The document discusses band theory of solids and semiconductor devices. It explains that in solids, discrete electron energy levels split into bands. The valence band is fully filled while the conduction band is empty or partially filled, with a band gap separating the two. Semiconductors have a smaller band gap than insulators. Intrinsic semiconductors have equal numbers of electrons and holes, while extrinsic ones are doped with impurities. PN junctions are formed by combining P-type and N-type materials and act as diodes, allowing current in one direction. Diodes have applications as rectifiers, transistors, and other devices that convert between electrical and optical signals.
7 band structure
The document discusses the transition from discrete atomic energy levels to energy bands in crystalline solids. As atoms come together to form a crystal lattice, the discrete energy levels of individual atoms broaden and overlap, forming continuous bands of allowed energies separated by forbidden gaps. Electrons near the top of the valence band can be excited into the conduction band, where they behave as free particles able to move through the solid and conduct electricity. Covalent bonding between atoms is also explained using the concept of energy bands.
Band structure(2)
This document provides an overview of electronic band structure and Bloch theory in solid state physics. It discusses the differences between the Sommerfeld and Bloch approaches to modeling electron behavior in periodic solids. Key points include:
- Bloch's treatment models electrons using band indices and crystal momentum rather than just momentum.
- Bloch states follow classical dynamics on average, with crystal momentum replacing ordinary momentum.
- The band structure determines allowed electron energies and velocities for a given crystal momentum.
- Bloch's theory accounts for periodic potentials within the crystal lattice, allowing for band gaps and a more accurate description of electron behavior in solids.
Chapter 9 Electrical Properties
This document summarizes the key electrical properties of metals and semiconductors. It discusses Ohm's law and how electrical conductivity in metals is influenced by drift velocity and current density. It also explains how resistivity is related to temperature in metals. For semiconductors, it describes the band structure of insulators, metals and semiconductors and how conductivity varies with intrinsic carrier concentration and temperature in intrinsic semiconductors. It then discusses the effects of doping on carrier concentrations and conductivity in n-type and p-type extrinsic semiconductors. Finally, it provides an overview of compound semiconductors made of two or three elements.
BAND THEORY OF SOLIDS
The document discusses semiconductors and their properties. It explains that semiconductors have resistivity between conductors and insulators. Their energy bands consist of a conduction band, valence band, and a small forbidden gap of around 0.7-1.1 eV. This allows electrons to move between bands with small amounts of energy. The document also describes intrinsic and extrinsic semiconductors, and how doping with elements from group 3 or 5 creates an excess or deficiency of electrons, resulting in n-type or p-type materials respectively.
Semiconductor optoelectronic materials
This document discusses semiconductor materials and devices. It begins by explaining electricity and electron bands in atoms. It then discusses the properties and atomic structures of conductors, insulators, and semiconductors. Semiconductors can be made to act as insulators or conductors through doping, which introduces impurity atoms. The document describes how n-type and p-type semiconductors are formed and their current flow. It concludes by explaining how a p-n junction diode is formed at the interface of p-type and n-type semiconductors and its current-voltage characteristics.
Band theory of solids
This document provides an overview of semiconductor theory and devices. It begins by introducing the three categories of solids based on electrical conductivity: conductors, semiconductors, and insulators. It then discusses band theory, which models the allowed energy states in solids as continuous bands separated by forbidden gaps. Semiconductors are defined as having energy gaps small enough for thermal excitation of electrons between bands. The document covers models like the Kronig-Penney model that explain energy gaps. It also discusses how temperature affects resistivity in semiconductors by increasing the number of electrons excited into the conduction band.
Semiconductor theory
Semiconductor theorySchool of Design Engineering Fashion & Technology (DEFT), University of Wales, Newport
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
Band theory of semiconductor
This document discusses semiconductors and their properties. Semiconductors have resistivity between good conductors and insulators, around 10-2 to 104 ohm meters at room temperature. In semiconductors, there is a small forbidden gap between the valence band and conduction band of around 0.7-1.1 electronvolts. This small gap means electrons can move between bands with only a small amount of energy, allowing semiconductors to conduct electricity. In contrast, insulators have a large forbidden gap over 3 electronvolts, while conductors have no gap between bands.
Band gap of silicon
This document summarizes an experiment measuring the band gap energy (Eg) in silicon using the linear relationship between temperature and voltage for constant current in a diode. Eg was calculated from 275-333 K and agreed with known values. Eg was found to be 1.20 eV for a transistor junction and 1.17 eV for a silicon diode, varying weakly with temperature from 1.18 eV at 275 K to 1.1 eV at 335 K consistent with previous studies. The results provide an undergraduate laboratory method to determine Eg in semiconductors.
Ch 02
This document discusses different types of electron emission from metal surfaces. Thermionic emission occurs when heat is applied to a metal, increasing the kinetic energy of electrons and allowing them to overcome the surface barrier. Common thermionic emitters discussed are tungsten, thoriated tungsten, and oxide coatings, with their respective work functions and operating temperatures listed. The Richardson-Dushman equation describes how emission current density increases exponentially with temperature but depends on the work function of the emitter material.
Band theory
This document discusses band theory and several models used to describe electron behavior in solids, including the free electron model, nearly free electron model, and tight binding model. It provides an overview of each model, including their assumptions and how they describe properties like electron energy and band gaps. The free electron model treats electrons as independent particles but fails to explain material properties. The nearly free electron model incorporates a periodic potential and allows electron wavefunctions and energy bands to be described. The tight binding model uses a superposition of atomic orbitals to approximate electron wavefunctions in solids where potential is strong.
Electrical properties of materials
Electrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materials
Theory discussion
1. The document discusses several theories for modeling semiconductor junctions, including drift-diffusion, thermionic, and weak inversion models.
2. It also discusses limitations of the thermionic model and the need for a more complete theory that considers both majority and minority carrier transport as well as backscattering effects.
3. The discussion then shifts to developing a model to describe transport mechanisms in the source region of a transistor under terahertz excitation, considering both high-frequency circuit models and the effects of independent gate biasing.
Introduction to semiconductor materials
Semiconductor materials like silicon can be made to conduct electricity through "doping" with other atoms. Doping with atoms having extra electrons makes the material N-type and conductive, while doping with atoms missing electrons makes it P-type conductive. Semiconductor devices widely use controlled doping of silicon to generate and regulate electric current flow.
Opto electronics
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
4 b5lecture62008
The document discusses the band structure of electrons in solids. It explains that when electrons are placed in a periodic potential, as in metals and semiconductors, the allowed energy levels split and form bands separated by band gaps. The nearly-free electron model is introduced to account for this band structure by treating electrons as interacting with a periodic lattice potential rather than being completely free. The key outcomes are that the energy-momentum relationship becomes a series of bands rather than continuous, and band gaps open up where electron states are forbidden. This distinguishes conductors, semiconductors and insulators.
Electronic Principles
This document provides an overview of semiconductor PN junction theory. It begins with atomic theory, discussing the structure of atoms and energy bands in conductors, insulators, and semiconductors. Intrinsic and extrinsic semiconductors are introduced, where doping introduces impurities to alter conductivity. A PN junction is formed at the interface between a p-type and n-type semiconductor. During diffusion, majority carriers cross the junction, recombining and leaving a depletion region. A voltage can forward or reverse bias the junction, changing the depletion width and current flow characteristics.
Unit i edited
1. Electricity is the flow of electrons through a conductor. In AC power, electrons switch direction periodically at a set frequency (50 Hz in India), while in DC power electrons flow in one direction only.
2. Single phase power has one live wire, while three phase power has three live wires with the phases shifted 120 degrees from each other, providing more power with less current.
3. Protective devices like fuses and circuit breakers are used to cut off power in the event of overcurrent to prevent damage. Fuses melt and need replacing, while circuit breakers can be reset after tripping.
Physics ohm’s law
1. The document describes how current flows through a circuit using an analogy of charges moving up an escalator (battery) and through a paddle wheel (resistor).
2. Key components of a simple circuit are identified as a voltage source, conductive path, and resistor. Resistance is explained as how much an object resists electron flow.
3. Factors that determine resistance are described as the type of material, its thickness and length, and temperature. Conductors have low resistance while insulators have high resistance.
A BASIC INTRODUCTION TO SEMICONDUCTOR DEVICES - THE
Thermionic (vacuum tube) diodes and solid state (semiconductor) diodes were developed separately in the early 1900s as radio receiver detectors. Vacuum tube diodes were more commonly used in radios until the 1950s due to early semiconductor diodes being less stable. Semiconductor diodes are made from materials like silicon and germanium that have precise atomic structures that allow controlled current flow. A p-n junction is formed at the interface between p-type and n-type semiconductor materials and enables diode rectification properties. Diodes have various applications including rectification, clamping, clipping, and lighting.
Semiconductors
Semiconductors are substances that can conduct electricity under some conditions but not others. They have resistivity between metals and insulators. There are two types - elemental semiconductors consisting of a single element like silicon or germanium, and compound semiconductors consisting of multiple elements like indium phosphide. In semiconductors, energy levels split into permitted energy bands separated by a forbidden energy gap when atoms are close together. The valence band is filled with electrons and the conduction band above it is empty or partially filled, with a gap between them through which electrons need energy to move.
Chapter5 carrier transport phenomena
1) The document discusses carrier transport in semiconductors, including drift and diffusion currents. Carrier drift occurs due to an electric field and is characterized by carrier mobility, while diffusion is due to concentration gradients and characterized by the diffusion coefficient.
2) Mobility is affected by phonon and ionized impurity scattering. The net mobility is the sum of these scattering components. Conductivity is directly proportional to carrier concentration and mobility.
3) The Hall effect can be used to determine the type of semiconductor (n-type or p-type), carrier concentration, and carrier mobility. Measurement of the Hall voltage polarity indicates type, and its magnitude relates to concentration and mobility.
More Related Content
What's hot
Chapter 9 Electrical Properties
This document summarizes the key electrical properties of metals and semiconductors. It discusses Ohm's law and how electrical conductivity in metals is influenced by drift velocity and current density. It also explains how resistivity is related to temperature in metals. For semiconductors, it describes the band structure of insulators, metals and semiconductors and how conductivity varies with intrinsic carrier concentration and temperature in intrinsic semiconductors. It then discusses the effects of doping on carrier concentrations and conductivity in n-type and p-type extrinsic semiconductors. Finally, it provides an overview of compound semiconductors made of two or three elements.
BAND THEORY OF SOLIDS
The document discusses semiconductors and their properties. It explains that semiconductors have resistivity between conductors and insulators. Their energy bands consist of a conduction band, valence band, and a small forbidden gap of around 0.7-1.1 eV. This allows electrons to move between bands with small amounts of energy. The document also describes intrinsic and extrinsic semiconductors, and how doping with elements from group 3 or 5 creates an excess or deficiency of electrons, resulting in n-type or p-type materials respectively.
Semiconductor optoelectronic materials
This document discusses semiconductor materials and devices. It begins by explaining electricity and electron bands in atoms. It then discusses the properties and atomic structures of conductors, insulators, and semiconductors. Semiconductors can be made to act as insulators or conductors through doping, which introduces impurity atoms. The document describes how n-type and p-type semiconductors are formed and their current flow. It concludes by explaining how a p-n junction diode is formed at the interface of p-type and n-type semiconductors and its current-voltage characteristics.
Band theory of solids
This document provides an overview of semiconductor theory and devices. It begins by introducing the three categories of solids based on electrical conductivity: conductors, semiconductors, and insulators. It then discusses band theory, which models the allowed energy states in solids as continuous bands separated by forbidden gaps. Semiconductors are defined as having energy gaps small enough for thermal excitation of electrons between bands. The document covers models like the Kronig-Penney model that explain energy gaps. It also discusses how temperature affects resistivity in semiconductors by increasing the number of electrons excited into the conduction band.
Semiconductor theory
Semiconductor theorySchool of Design Engineering Fashion & Technology (DEFT), University of Wales, Newport
The following presentation is a part of the level 4 module -- Electrical and Electronic Principles. This resources is a part of the 2009/2010 Engineering (foundation degree, BEng and HN) courses from University of Wales Newport (course codes H101, H691, H620, HH37 and 001H). This resource is a part of the core modules for the full time 1st year undergraduate programme.
The BEng & Foundation Degrees and HNC/D in Engineering are designed to meet the needs of employers by placing the emphasis on the theoretical, practical and vocational aspects of engineering within the workplace and beyond. Engineering is becoming more high profile, and therefore more in demand as a skill set, in today’s high-tech world. This course has been designed to provide you with knowledge, skills and practical experience encountered in everyday engineering environments.
Band theory of semiconductor
This document discusses semiconductors and their properties. Semiconductors have resistivity between good conductors and insulators, around 10-2 to 104 ohm meters at room temperature. In semiconductors, there is a small forbidden gap between the valence band and conduction band of around 0.7-1.1 electronvolts. This small gap means electrons can move between bands with only a small amount of energy, allowing semiconductors to conduct electricity. In contrast, insulators have a large forbidden gap over 3 electronvolts, while conductors have no gap between bands.
Band gap of silicon
This document summarizes an experiment measuring the band gap energy (Eg) in silicon using the linear relationship between temperature and voltage for constant current in a diode. Eg was calculated from 275-333 K and agreed with known values. Eg was found to be 1.20 eV for a transistor junction and 1.17 eV for a silicon diode, varying weakly with temperature from 1.18 eV at 275 K to 1.1 eV at 335 K consistent with previous studies. The results provide an undergraduate laboratory method to determine Eg in semiconductors.
Ch 02
This document discusses different types of electron emission from metal surfaces. Thermionic emission occurs when heat is applied to a metal, increasing the kinetic energy of electrons and allowing them to overcome the surface barrier. Common thermionic emitters discussed are tungsten, thoriated tungsten, and oxide coatings, with their respective work functions and operating temperatures listed. The Richardson-Dushman equation describes how emission current density increases exponentially with temperature but depends on the work function of the emitter material.
Band theory
This document discusses band theory and several models used to describe electron behavior in solids, including the free electron model, nearly free electron model, and tight binding model. It provides an overview of each model, including their assumptions and how they describe properties like electron energy and band gaps. The free electron model treats electrons as independent particles but fails to explain material properties. The nearly free electron model incorporates a periodic potential and allows electron wavefunctions and energy bands to be described. The tight binding model uses a superposition of atomic orbitals to approximate electron wavefunctions in solids where potential is strong.
Electrical properties of materials
Electrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materialsElectrical properties of materials
Theory discussion
1. The document discusses several theories for modeling semiconductor junctions, including drift-diffusion, thermionic, and weak inversion models.
2. It also discusses limitations of the thermionic model and the need for a more complete theory that considers both majority and minority carrier transport as well as backscattering effects.
3. The discussion then shifts to developing a model to describe transport mechanisms in the source region of a transistor under terahertz excitation, considering both high-frequency circuit models and the effects of independent gate biasing.
Introduction to semiconductor materials
Semiconductor materials like silicon can be made to conduct electricity through "doping" with other atoms. Doping with atoms having extra electrons makes the material N-type and conductive, while doping with atoms missing electrons makes it P-type conductive. Semiconductor devices widely use controlled doping of silicon to generate and regulate electric current flow.
Opto electronics
Solid State Electronics.
this slide is made from taking help of
TextBook
Ben.G.StreetmanandSanjayBanerjee:SolidStateElectronicDevices,Prentice-HallofIndiaPrivateLimited.
4 b5lecture62008
The document discusses the band structure of electrons in solids. It explains that when electrons are placed in a periodic potential, as in metals and semiconductors, the allowed energy levels split and form bands separated by band gaps. The nearly-free electron model is introduced to account for this band structure by treating electrons as interacting with a periodic lattice potential rather than being completely free. The key outcomes are that the energy-momentum relationship becomes a series of bands rather than continuous, and band gaps open up where electron states are forbidden. This distinguishes conductors, semiconductors and insulators.
Electronic Principles
This document provides an overview of semiconductor PN junction theory. It begins with atomic theory, discussing the structure of atoms and energy bands in conductors, insulators, and semiconductors. Intrinsic and extrinsic semiconductors are introduced, where doping introduces impurities to alter conductivity. A PN junction is formed at the interface between a p-type and n-type semiconductor. During diffusion, majority carriers cross the junction, recombining and leaving a depletion region. A voltage can forward or reverse bias the junction, changing the depletion width and current flow characteristics.
Unit i edited
1. Electricity is the flow of electrons through a conductor. In AC power, electrons switch direction periodically at a set frequency (50 Hz in India), while in DC power electrons flow in one direction only.
2. Single phase power has one live wire, while three phase power has three live wires with the phases shifted 120 degrees from each other, providing more power with less current.
3. Protective devices like fuses and circuit breakers are used to cut off power in the event of overcurrent to prevent damage. Fuses melt and need replacing, while circuit breakers can be reset after tripping.
Physics ohm’s law
1. The document describes how current flows through a circuit using an analogy of charges moving up an escalator (battery) and through a paddle wheel (resistor).
2. Key components of a simple circuit are identified as a voltage source, conductive path, and resistor. Resistance is explained as how much an object resists electron flow.
3. Factors that determine resistance are described as the type of material, its thickness and length, and temperature. Conductors have low resistance while insulators have high resistance.
A BASIC INTRODUCTION TO SEMICONDUCTOR DEVICES - THE
Thermionic (vacuum tube) diodes and solid state (semiconductor) diodes were developed separately in the early 1900s as radio receiver detectors. Vacuum tube diodes were more commonly used in radios until the 1950s due to early semiconductor diodes being less stable. Semiconductor diodes are made from materials like silicon and germanium that have precise atomic structures that allow controlled current flow. A p-n junction is formed at the interface between p-type and n-type semiconductor materials and enables diode rectification properties. Diodes have various applications including rectification, clamping, clipping, and lighting.
Semiconductors
Semiconductors are substances that can conduct electricity under some conditions but not others. They have resistivity between metals and insulators. There are two types - elemental semiconductors consisting of a single element like silicon or germanium, and compound semiconductors consisting of multiple elements like indium phosphide. In semiconductors, energy levels split into permitted energy bands separated by a forbidden energy gap when atoms are close together. The valence band is filled with electrons and the conduction band above it is empty or partially filled, with a gap between them through which electrons need energy to move.
Chapter5 carrier transport phenomena
1) The document discusses carrier transport in semiconductors, including drift and diffusion currents. Carrier drift occurs due to an electric field and is characterized by carrier mobility, while diffusion is due to concentration gradients and characterized by the diffusion coefficient.
2) Mobility is affected by phonon and ionized impurity scattering. The net mobility is the sum of these scattering components. Conductivity is directly proportional to carrier concentration and mobility.
3) The Hall effect can be used to determine the type of semiconductor (n-type or p-type), carrier concentration, and carrier mobility. Measurement of the Hall voltage polarity indicates type, and its magnitude relates to concentration and mobility.
What's hot (20)
A BASIC INTRODUCTION TO SEMICONDUCTOR DEVICES - THE
A BASIC INTRODUCTION TO SEMICONDUCTOR DEVICES - THE
Viewers also liked
Fisika Dasar I Per.14
Dokumen tersebut membahas tentang kesetimbangan statik dan elastisitas. Pertama, dijelaskan definisi kesetimbangan dan syarat-syaratnya. Kemudian dibahas mengenai pusat gravitasi dan contoh soalnya. Terakhir, dibahas mengenai elastisitas yang meliputi tegangan, regangan, dan jenis-jenis modulus elastik beserta contoh perhitungannya.
Pertemuan 2&3
Dokumen ini membahas tentang konsep dan pengertian budaya menurut beberapa ahli. Budaya didefinisikan sebagai keseluruhan pengetahuan, kepercayaan, seni, norma, dan kebiasaan yang dipelajari secara sosial. Dokumen ini juga membahas unsur-unsur budaya seperti nilai, pandangan hidup, persepsi, dan etos budaya serta berbagai pengertian dan wujud budaya.
Pertemuan 3 close packing
This document discusses close packing structures in crystals. It explains that there are two main types of close packing: hexagonal close packing (hcp) and cubic close packing (ccp). Ccp packing is equivalent to a face-centered cubic unit cell. Both hcp and ccp structures make efficient use of space with a packing fraction of 0.74, while other structures like primitive unit cells have lower packing fractions with more empty space. The document provides examples of calculating packing fractions and analyzing the geometry of close packed structures.
Fisika Dasar Per.04
Dokumen ini membahas tentang gerak jatuh bebas yang merupakan contoh gerak satu dimensi dengan percepatan konstan akibat gravitasi. Asumsi yang digunakan adalah hambatan udara diabaikan dan arah gravitasi ke bawah bernilai negatif -9,8 m/detik^2. Persamaan kinematika digunakan untuk menghitung tinggi, kecepatan, dan waktu jatuh bebas.
Supriyadi pengantar ilmu kealaman dasar (iad) pert 14
Dokumen ini membahas tentang isu-isu lingkungan global, nasional, dan lokal. Isu lingkungan global meliputi pencemaran udara oleh gas seperti CO, NOx, SOx, dan partikel serta pencemaran air dan tanah oleh limbah dan bahan kimia berbahaya. Sedangkan isu lingkungan nasional dan lokal meliputi pencemaran sungai oleh limbah industri dan rumah tangga. Dokumen ini juga menjelaskan berbagai jenis pencemaran dan dampaknya terhad
Supriyadi pengantar ilmu kealaman dasar (iad) pert 4
Supriyadi pengantar ilmu kealaman dasar (iad) pert 4
Fisika Dasar I Per.09
The document discusses different forms of energy including heat, chemical, electromagnetic, nuclear, and mechanical energy. It provides examples of how each form of energy is involved in various activities and processes in nature. The key forms of energy are defined and examples are given to illustrate how one form of energy can be converted to another through different energy conversions. The concept of work is also introduced and explained in the context of work done by constant and varying forces.
Fistum 4-metodologi
Dokumen tersebut membahas metodologi fisika kuantum, yang mencakup penjelasan sistem dengan fungsi gelombang Schrodinger, penjelasan besaran fisika melalui operator, dan pengukuran sebagai pengerjaan operator terhadap fungsi gelombang.
Fisika Dasar I Pert.07
The document discusses Newton's laws of motion and classical mechanics. It introduces Newton's three laws, including inertia, mass, forces, and motion. Key concepts covered are Newton's first law of inertia, Newton's second law relating force, mass and acceleration, and Newton's third law of equal and opposite forces. Examples are provided to illustrate applications of Newton's laws to problems involving forces, equilibrium, friction, and connected objects.
Sistem bilangan kompleks
The document discusses complex numbers, including their definition, properties, and operations. It covers topics such as the complex number field, algebraic operations, modulus, conjugate complex numbers, polar form, exponents, roots, and examples. Various properties are examined, such as those of modulus and conjugate complex numbers, as well as the arguments of polar forms and algebraic operations involving exponents, roots, and examples.
Induksi matematika
Dokumen tersebut merangkum tentang:
1. Induksi matematika sebagai teknik pembuktian untuk pernyataan perihal bilangan bulat
2. Prinsip kerja induksi matematika yaitu langkah basis dan langkah induksi
3. Contoh soal pembuktian dengan induksi matematika
Viewers also liked (18)
Supriyadi pengantar ilmu kealaman dasar (iad) pert 14
Supriyadi pengantar ilmu kealaman dasar (iad) pert 14
Supriyadi pengantar ilmu kealaman dasar (iad) pert 4
Supriyadi pengantar ilmu kealaman dasar (iad) pert 4
Similar to Fisika Modern 15 molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductor
The document discusses semiconductor materials and their electrical properties. It explains that semiconductors have electrical conductivity between metals and insulators. The electrical properties of semiconductors can be understood using band theory, where electrons occupy allowed energy bands separated by forbidden bands. At low temperatures, semiconductors behave as insulators as their valence band is full and conduction band is empty, but at room temperature some electrons gain enough energy to cross the band gap. This allows both holes and electrons to contribute to electrical conduction in semiconductors.
ENERGY BANDS AND EFFECTIVE MASSppt
1) The document discusses energy band theory and how it relates to the electrical properties of semiconductors, insulators, and metals. It explains that semiconductors have a small forbidden band gap between the valence and conduction bands, allowing thermal or electromagnetic excitation of electrons.
2) The concept of effective mass is introduced, where electrons in a crystal lattice behave as if they have a different mass than free electrons due to the crystal potential. Effective mass depends on the curvature of electron energy-momentum diagrams.
3) Direct and indirect band gap materials are distinguished based on whether the minimum of the conduction band and maximum of the valence band occur at the same or different crystal momentum values.
Module 1 Semiconductors (1).pptx
1) Semiconductors have energy band gaps between 1-4 eV allowing electrons to move between bands with small energy inputs, unlike insulators. Metals have overlapping or no bands.
2) Intrinsic semiconductors have small numbers of electrons and holes as charge carriers from thermal excitation breaking covalent bonds. Extrinsic semiconductors are doped with donor or acceptor impurities to add more free electrons or holes.
3) Donor impurities introduce extra electrons in the conduction band of n-type semiconductors. Acceptor impurities introduce holes in the valence band of p-type semiconductors.
Semiconductors (rawat d agreatt)
This document provides an overview of intrinsic and extrinsic semiconductors. It begins with an introduction to crystalline solids and classifications of solids as conductors, insulators, or semiconductors. It then discusses intrinsic semiconductors, how increasing temperature generates electron-hole pairs, and how conductivity increases with temperature. Extrinsic or doped semiconductors are introduced, including n-type and p-type semiconductors created by adding donor or acceptor impurities. The document explains how doping increases the number of charge carriers and conductivity.
Diploma sem 2 applied science physics-unit 3-chap-1 band theory of solid
This document provides an overview of band theory of solids. It discusses key concepts such as effective mass of electrons, the concept of holes, and the energy band structure of conductors, semiconductors and insulators. It explains that conductors have overlapping valence and conduction bands, semiconductors have a small bandgap, and insulators have a large bandgap. The document also covers intrinsic and extrinsic semiconductors, the operation of p-n junction diodes under reverse and forward bias, and types of diodes such as simple diodes and Zener diodes.
Energy bands and gaps in semiconductor
This document summarizes a seminar on energy bands and gaps in semiconductors. It discusses the introduction of energy bands, including valence bands, conduction bands, and forbidden gaps. It describes how materials are classified as insulators, conductors, or semiconductors based on their band gap energies. Direct and indirect band gap semiconductors are also defined. Intrinsic, n-type, and p-type semiconductors are classified based on their majority charge carriers.
B.tech sem i engineering physics u ii chapter 1-band theory of solid
This document provides an overview of band theory of solids. It discusses effective mass of electrons in solids, the concept of holes, and the energy band structure of conductors, semiconductors, and insulators. Intrinsic and extrinsic semiconductors are described, along with p-type and n-type materials. Simple diode and Zener diode operation is summarized, including forward and reverse bias conditions.
Topic energy band gap material science ppt
Energy bands consisting of a large number of closely spaced energy levels exist in crystalline materials. The bands can be thought of as the collection of the individual energy levels of electrons surrounding each atom. The wavefunctions of the individual electrons, however, overlap with those of electrons confined to neighboring atoms. The Pauli exclusion principle does not allow the electron energy levels to be the same so that one obtains a set of closely spaced energy levels, forming an energy band. The energy band model is crucial to any detailed treatment of semiconductor devices. It provides the framework needed to understand the concept of an energy bandgap and that of conduction in an almost filled band as described by the empty states.
semo conductor.ppt
This document provides an overview of semiconductor theory and band theory of solids. It discusses how band theory can explain the differing electrical properties of conductors, semiconductors, and insulators based on their band structure and energy gaps. Semiconductors have a small energy gap between the valence and conduction bands that can be overcome by thermal excitation, allowing some electrons to reach the conduction band. Doping semiconductors with impurities can create n-type or p-type materials by introducing extra electrons or holes that increase conductivity. The document also covers thermoelectric effects in semiconductors.
TRM-11fhsdbjbfffffffffffffffffffffffffffffffffffffff.ppt
The document discusses semiconductor theory and band theory of solids. It introduces band theory, which explains that in solids electron energy levels split into nearly continuous bands separated by forbidden gaps. Semiconductors have a small band gap (<1eV) allowing thermal excitation of electrons across the gap. This explains their decreasing resistivity with increasing temperature as electrons jump from the valence to conduction band. The Kronig-Penney model further illustrates band structure and forbidden gaps in semiconductors.
Semiconcuctor devices introduction
PHYSICS - CLASS 12 - NCERT _CHAPTER 14
SEMICONDUCTOR MATERIAL & DEVICES - INTRODUCTION TILL p,n type semiconductors
Semi conductors
There are three cases for the energy band gap in materials:
1) Metals have overlapping or partially filled conduction and valence bands, allowing electrons to easily move and conduct electricity.
2) Insulators have a large band gap (>3eV) so electrons cannot be excited across the gap, resulting in very low conductivity.
3) Semiconductors have a smaller band gap (<3eV) that some electrons can cross at room temperature, though in lower numbers, resulting in conductivity between metals and insulators.
Semiconductors
This document discusses semiconductors and their properties. It explains that semiconductors have electrical conductivity between conductors and insulators. Their valence and conduction bands are almost full and empty respectively, with a small energy gap that allows electrons to cross over with a smaller electric field compared to insulators. Common semiconductors like silicon and germanium form covalent bonds and have crystalline structures. Doping semiconductors with impurities can create an excess or shortage of electrons, making them either n-type or p-type semiconductors respectively.
Electronicdevicescircuits 140517065905-phpapp01
This document provides an overview of semiconductor theory and electronic devices and circuits. It discusses atomic structure, energy band theory, insulators, semiconductors and metals. It describes charge densities in semiconductors, the Fermi level, drift and diffusion currents, and the Hall effect. It also includes sample assignments and analysis of past GATE exam questions related to electronic devices.
UNIT 3 Analog Electronics.pptx
The document discusses energy bands in semiconductors. It explains that semiconductors have a valence band, conduction band, and a forbidden energy gap between the bands. Intrinsic semiconductors generate electron-hole pairs when heated, while extrinsic semiconductors are doped with impurities to generate more charge carriers. P-type semiconductors are doped with acceptors to generate holes, while N-type are doped with donors to generate electrons. A PN junction forms a depletion region that acts as a diode, allowing current in one direction but blocking it in the other. Semiconductors find applications in devices like transistors, solar cells, and LEDs.
Basic electronics
BASIC ELECTRONICS
Electronics is a branch of physics that deals with the emission and effects of electrons in materials.
Or
Is a branch of science dealing with the study and development of circuit involving semi conductors, logic gates and other electrical components like resistors, capacitors and inductors.
Diode Descriptions
This document provides an overview of diodes and semiconductors. It explains that semiconductors are made from elements that can form covalent bonds, sharing electrons. In solids, the atomic orbitals overlap to form continuous energy bands separated by forbidden gaps. Metals have partially filled bands allowing electron movement, while insulators have large gaps. Semiconductors have small gaps, allowing some thermal excitation of electrons across the gap and the movement of both electrons and holes. Doping introduces excess electrons or holes, creating n-type or p-type semiconductors with different majority and minority carriers.
Unit 3.docx
1. The document discusses intrinsic and extrinsic semiconductors. Intrinsic semiconductors are pure semiconductors without dopants, while extrinsic semiconductors are doped by adding donor or acceptor atoms.
2. Extrinsic semiconductors are classified as n-type or p-type based on whether electrons or holes are the majority carrier. N-type uses donor dopants to increase electron concentration, while p-type uses acceptor dopants to increase hole concentration.
3. Semiconductor devices like diodes and transistors make use of the different properties of n-type and p-type extrinsic semiconductors. Diodes consist of a p-n junction
Class 12 th semiconductor part 1
The document discusses semiconductors and their properties. It begins by explaining that semiconductors have a smaller bandgap than insulators, allowing electrons in the valence band to jump to the conduction band with external energy. This gives semiconductors the ability to conduct electricity under certain conditions. It then describes the valence band, conduction band, and forbidden bandgap in semiconductors. The document also discusses the fermi level and how it relates to charge carriers in semiconductors.
Class 12 th semiconductor part 1
1. The document discusses semiconductors and their energy band structure. Semiconductors have a small forbidden band gap that allows electrons to move between the valence and conduction bands with small amounts of energy.
2. In semiconductors, the conduction band is partially filled or overlaps with the valence band, allowing electrons to move freely. This gives semiconductors the ability to be insulators or conductors depending on conditions.
3. The Fermi level lies between the valence and conduction bands and represents the highest energy level electrons can occupy at absolute zero temperature. Charge carriers in semiconductors include both holes in the valence band and electrons in the conduction band.
Similar to Fisika Modern 15 molecules andsolid_semiconductor (20)
Fisika Modern (15) molecules andsolid_semiconductor
Fisika Modern (15) molecules andsolid_semiconductor
Diploma sem 2 applied science physics-unit 3-chap-1 band theory of solid
Diploma sem 2 applied science physics-unit 3-chap-1 band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solid
B.tech sem i engineering physics u ii chapter 1-band theory of solid
TRM-11fhsdbjbfffffffffffffffffffffffffffffffffffffff.ppt
TRM-11fhsdbjbfffffffffffffffffffffffffffffffffffffff.ppt
More from jayamartha
Kalkulus 1 - Kuis 4
This math problem involves finding the equations of the tangent and normal lines to the graph of a function f(x) at a given point (a, f(a)), as well as finding the x-coordinates where the tangent line is horizontal for points on the graph of the function between two x-values.
Kalkulus 1 - Kuis 3
This document discusses a calculus course and finding derivatives of functions. It introduces a function f(x) defined for x ≥ 0 with f(0) = 0, and states it will find the derivative of this function. It also says it will find the derivative of another unspecified function.
Kalkulus 1 - Kuis 2
This document discusses a calculus course and contains two problems. The first problem asks to find the value of A that makes a function continuous. The second problem asks to discuss the continuity of an unspecified function.
Kalkulus 1 - Kuis 1
This document discusses a calculus exam and asks students to consider two functions and find an unknown value. It provides the course name "Calculus I" and indicates there are two functions to consider and one value to find on the exam.
Week 15 kognitif
Dokumen tersebut membahas teori belajar kognitif yang menjelaskan bahwa belajar adalah perubahan proses mental internal daripada perubahan tingkah laku. Teori ini menekankan pentingnya proses berpikir dalam belajar dan bagaimana siswa mengorganisasi dan mengintegrasikan informasi baru ke dalam skema pengetahuan yang sudah ada. Dokumen ini juga membahas beberapa pendekatan belajar menurut psikologi kognitif seperti
15-superconductivity
The document discusses superconductors and magnetic levitation. It describes how superconductors expel magnetic fields below a critical temperature due to electron pairing. This allows magnetic levitation, where a magnet can float above a superconductor. Japan has developed maglev train systems that use this effect, with trains levitating and propelling along guideways using superconducting magnets and copper coils. Maglev trains have reached speeds over 500 km/h on Japanese test tracks.
12-14 d-effect_of_electron_-_electron_interaction
The document discusses electron beam interactions and dosimetry in radiation therapy. It describes how electrons interact with matter through elastic and inelastic collisions. It also discusses electron beam characteristics such as depth-dose distribution and factors that affect beam output such as field size, distance from the source, and inhomogeneities. Monitor unit calculations for electron beams are presented along with examples.
7-metal_vs_semiconductor
The document discusses the structure and behavior of metal-semiconductor junctions, comparing them to p-n junctions. It covers the band structure and barrier formation at the junction, both with and without surface states. Applying a voltage bias changes the depletion width and electric field. Current flows as majority carriers cross the lowered barrier. Models describe the barrier transit rates, and applications include ohmic contacts, doping profiling, and diodes. Metal-semiconductor junctions are useful due to majority-carrier operation and low forward current barriers.
12 -14 c-spin_paramagnetism
The document discusses different types of magnetism exhibited by materials, including ferromagnetism, paramagnetism, and diamagnetism. Ferromagnetic materials like iron have large, positive magnetic susceptibility and retain magnetization without an external magnetic field. Paramagnetic materials like aluminum have smaller, positive susceptibility and require an external magnetic field to become magnetized. Diamagnetic materials like copper have negative susceptibility and are weakly repelled by magnetic fields. The magnetic behavior of materials depends on their electron configuration and interactions between atomic dipoles.
12 -14 b-diamagnetism
The document discusses different types of magnetic behavior in materials, including diamagnetism, paramagnetism, and ferromagnetism. Diamagnetic materials have no intrinsic magnetic moments, but an applied magnetic field induces small, opposing magnetic moments. Paramagnetic materials have intrinsic magnetic moments that align with an applied field. Ferromagnetic materials also have intrinsic moments, and nearby moments interact strongly and align collectively, producing permanent magnetization below the Curie temperature.
12-14 a-magnetic_effects_in_quantum _mechanics
The document discusses several topics in quantum mechanics including:
1) The time-dependent transition amplitude of electrons in magnetic fields and the Aharonov-Bohm effect.
2) Quantizing the motion of electrons confined to a plane in a uniform perpendicular magnetic field using Landau levels.
3) Observing Aharonov-Bohm oscillations in semiconductor quantum rings caused by magnetic flux through the ring area.
10-11 a-energy_bands
The document discusses energy bands and III-V alloys. It explains that in crystalline solids, the allowed energies of electrons in isolated atoms split into energy bands. This is visualized as an overlap of electron wave functions. It also discusses the importance of III-V materials for applications like lasers and LEDs due to their direct bandgaps and high electron mobilities. Additionally, it covers topics like ternary and quaternary III-V alloys, which provide flexibility in band structure engineering, as well as considerations for designing heterostructures with these materials.
7 -metal_vs_semiconductor
The document discusses metal-semiconductor junctions, including:
1. The structure of the junction and how energy bands evolve with the metal and semiconductor coming together. Surface states at the semiconductor surface pin the Fermi level.
2. Applying a voltage bias changes the potential barrier and depletion region width, affecting current flow.
3. Current is modeled as thermionic emission of majority carriers over the altered potential barrier, with the net current dependent on bias voltage. Models of the barrier transit rate R further develop current expressions.
Week-13 model pembelajaran
Dokumen tersebut membahas model-model pembelajaran inovatif yang dapat digunakan oleh dosen, meliputi pendekatan, metode, strategi, dan teknik pembelajaran. Dibahas pula kriteria model pembelajaran, contoh model pembelajaran kooperatif, berbasis masalah, inkuiri, dan langsung beserta sintaks setiap modelnya.
5-6-definition_of_semiconductor
Dokumen tersebut merupakan materi perkuliahan tentang semikonduktor yang menjelaskan definisi semikonduktor, jenis-jenisnya seperti intrinsik dan ekstrinsik, serta contoh penerapannya dalam komponen elektronika seperti dioda dan transistor.
Week-15 kognitif
Dokumen ini membahas tentang teori belajar kognitif. Teori ini menjelaskan bahwa belajar adalah perubahan proses mental internal daripada perubahan tingkah laku. Belajar kognitif melibatkan skema, ingatan jangka panjang, dan pendekatan seperti belajar reseptif dan belajar penemuan.
Pert 1-4
This document discusses several models for describing the band structure of solids, including the nearly free electron model, Kronig-Penney model, and Bloch theorem. It outlines the successes and limitations of the free electron model in explaining properties of metals, semiconductors, and insulators. The band model was developed to address these limitations through concepts like effective mass and energy gaps between bands. Specific models like Kronig-Penney use periodic potentials to understand the formation of energy bands and gaps.
Fisika Dasar I Per.21
The document discusses properties of sound waves, including:
1) The speed of sound depends on the density and compressibility of the medium, and is faster in denser media.
2) Sound waves are longitudinal waves that transfer energy through pressure variations. The intensity of sound decreases with distance from the source.
3) The Doppler effect causes changes in perceived frequency for observers moving toward or away from a sound source.
More from jayamartha (20)
Recently uploaded
PCOS corelations and management through Ayurveda.
This presentation includes basic of PCOS their pathology and treatment and also Ayurveda correlation of PCOS and Ayurvedic line of treatment mentioned in classics.
Exploiting Artificial Intelligence for Empowering Researchers and Faculty, In...
Exploiting Artificial Intelligence for Empowering Researchers and Faculty, In...Dr. Vinod Kumar Kanvaria
Exploiting Artificial Intelligence for Empowering Researchers and Faculty,
International FDP on Fundamentals of Research in Social Sciences
at Integral University, Lucknow, 06.06.2024
By Dr. Vinod Kumar KanvariaNatural birth techniques - Mrs.Akanksha Trivedi Rama University
Natural birth techniques - Mrs.Akanksha Trivedi Rama UniversityAkanksha trivedi rama nursing college kanpur.
Natural birth techniques are various type such as/ water birth , alexender method, hypnosis, bradley method, lamaze method etcSouth African Journal of Science: Writing with integrity workshop (2024)
South African Journal of Science: Writing with integrity workshop (2024)Academy of Science of South Africa
A workshop hosted by the South African Journal of Science aimed at postgraduate students and early career researchers with little or no experience in writing and publishing journal articles.Main Java[All of the Base Concepts}.docx
This is part 1 of my Java Learning Journey. This Contains Custom methods, classes, constructors, packages, multithreading , try- catch block, finally block and more.
Your Skill Boost Masterclass: Strategies for Effective Upskilling
Your Skill Boost Masterclass: Strategies for Effective UpskillingExcellence Foundation for South Sudan
Strategies for Effective Upskilling is a presentation by Chinwendu Peace in a Your Skill Boost Masterclass organisation by the Excellence Foundation for South Sudan on 08th and 09th June 2024 from 1 PM to 3 PM on each day.The simplified electron and muon model, Oscillating Spacetime: The Foundation...
Discover the Simplified Electron and Muon Model: A New Wave-Based Approach to Understanding Particles delves into a groundbreaking theory that presents electrons and muons as rotating soliton waves within oscillating spacetime. Geared towards students, researchers, and science buffs, this book breaks down complex ideas into simple explanations. It covers topics such as electron waves, temporal dynamics, and the implications of this model on particle physics. With clear illustrations and easy-to-follow explanations, readers will gain a new outlook on the universe's fundamental nature.
ANATOMY AND BIOMECHANICS OF HIP JOINT.pdf
it describes the bony anatomy including the femoral head , acetabulum, labrum . also discusses the capsule , ligaments . muscle that act on the hip joint and the range of motion are outlined. factors affecting hip joint stability and weight transmission through the joint are summarized.
A Survey of Techniques for Maximizing LLM Performance.pptx
A Survey of Techniques for Maximizing LLM Performance
clinical examination of hip joint (1).pdf
described clinical examination all orthopeadic conditions .
Pollock and Snow "DEIA in the Scholarly Landscape, Session One: Setting Expec...
Pollock and Snow "DEIA in the Scholarly Landscape, Session One: Setting Expec...National Information Standards Organization (NISO)
This presentation was provided by Steph Pollock of The American Psychological Association’s Journals Program, and Damita Snow, of The American Society of Civil Engineers (ASCE), for the initial session of NISO's 2024 Training Series "DEIA in the Scholarly Landscape." Session One: 'Setting Expectations: a DEIA Primer,' was held June 6, 2024.BÀI TẬP BỔ TRỢ TIẾNG ANH 8 CẢ NĂM - GLOBAL SUCCESS - NĂM HỌC 2023-2024 (CÓ FI...
BÀI TẬP BỔ TRỢ TIẾNG ANH 8 CẢ NĂM - GLOBAL SUCCESS - NĂM HỌC 2023-2024 (CÓ FI...Nguyen Thanh Tu Collection
https://app.box.com/s/y977uz6bpd3af4qsebv7r9b7s21935vdThe Diamonds of 2023-2024 in the IGRA collection
A review of the growth of the Israel Genealogy Research Association Database Collection for the last 12 months. Our collection is now passed the 3 million mark and still growing. See which archives have contributed the most. See the different types of records we have, and which years have had records added. You can also see what we have for the future.
Digital Artifact 1 - 10VCD Environments Unit
Digital Artifact 1 - 10VCD Environments Unit - NGV Pavilion Concept Design
Recently uploaded (20)
Exploiting Artificial Intelligence for Empowering Researchers and Faculty, In...
Exploiting Artificial Intelligence for Empowering Researchers and Faculty, In...
Natural birth techniques - Mrs.Akanksha Trivedi Rama University
Natural birth techniques - Mrs.Akanksha Trivedi Rama University
South African Journal of Science: Writing with integrity workshop (2024)
South African Journal of Science: Writing with integrity workshop (2024)
Your Skill Boost Masterclass: Strategies for Effective Upskilling
Your Skill Boost Masterclass: Strategies for Effective Upskilling
The simplified electron and muon model, Oscillating Spacetime: The Foundation...
The simplified electron and muon model, Oscillating Spacetime: The Foundation...
A Survey of Techniques for Maximizing LLM Performance.pptx
A Survey of Techniques for Maximizing LLM Performance.pptx
Film vocab for eal 3 students: Australia the movie
Film vocab for eal 3 students: Australia the movie
Pollock and Snow "DEIA in the Scholarly Landscape, Session One: Setting Expec...
Pollock and Snow "DEIA in the Scholarly Landscape, Session One: Setting Expec...
BÀI TẬP BỔ TRỢ TIẾNG ANH 8 CẢ NĂM - GLOBAL SUCCESS - NĂM HỌC 2023-2024 (CÓ FI...
BÀI TẬP BỔ TRỢ TIẾNG ANH 8 CẢ NĂM - GLOBAL SUCCESS - NĂM HỌC 2023-2024 (CÓ FI...
Fisika Modern 15 molecules andsolid_semiconductor
- 8. .:: Semiconductor, Insulators, Conductors ::. Both full and empty bands do not partake in electrical conduction. Full band All energy levels are occupied by electrons Empty band All energy levels are empty ( no electrons) 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 17. 3- Electromagnetic Radiation : h = 6.62 x 10 -34 J-s c = 3 x 10 8 m/s 1 eV=1.6x10 -19 J To promote electrons from VB to CB Silicon , the wavelength of the photons must 1.1 μ m or less Near infrared 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 23. 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id | The energy of the free e - is related to the k free e - mass , m 0 is the propogation constant The waves are standing waves The momentum is (1) (2) By means of equations (1) and (2) certain e - momenta are not allowed by the crystal. The velocity of the electron at these momentum values is zero. The energy of the free electron can be related to its momentum momentum k Energy E versus k diagram is a parabola. Energy is continuous with k, i,e, all energy (momentum) values are allowed. E versus k diagram or Energy versus momentum diagrams
- 31. -1 -2 0 2 3 1 4 GaAs Conduction band Valance band 0 Δ E=0.31 Eg [111] [100] k Energy (eV) -1 -2 0 2 3 1 4 Si Conduction band Valance band 0 Eg [111] [100] k Energy (eV) 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 32. -1 -2 0 2 3 1 4 GaAs Conduction band Valance band 0 Δ E=0.31 Eg [111] [100] k Energy (eV) Energy band structure of GaAs Band gap is the smallest energy separation between the valence and conduction band edges. The smallest energy difference occurs at the same momentum value Direct band gap semiconductor 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 34. E g k E E E direct transition 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 35. E g k E E direct transition 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 36. E g k E 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 37. E g indirect transition k E 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 38. E g indirect transition k E 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |
- 39. TERIMA KASIH 07/03/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |